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| DISCRETE SEMICONDUCTORS DATA SHEET BFG197; BFG197/X; BFG197/XR NPN 7 GHz wideband transistor Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification NPN 7 GHz wideband transistor FEATURES * High power gain * Low noise figure * Gold metallization ensures excellent reliability. DESCRIPTION The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope. It is primarily intended for wideband applications in the GHz range, such as satellite TV systems and repeater amplifiers in fibre-optic systems. PINNING PIN 1 2 3 4 1 2 3 4 1 2 3 4 DESCRIPTION collector base emitter emitter collector emitter base emitter collector emitter base emitter BFG197; BFG197/X; BFG197/XR BFG197 (Fig.1) Code: V5 handbook, 2 columns 4 3 1 Top view 2 MSB014 BFG197/X (Fig.1) Code: V13 Fig.1 SOT143. BFG197A/XR (Fig.2) Code: V35 handbook, 2 columns 3 4 2 Top view 1 MSB035 Fig.2 SOT143XR. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot Cre fT GUM PARAMETER collector-base voltage collector-emitter voltage collector current total power dissipation feedback capacitance transition frequency maximum unilateral power gain open base DC value up to Ts = 75 C; note 1 IC = ic = 0; VCB = 8 V; f = 1 MHz IC = 50 mA; VCE = 4 V; f = 2 GHz IC = 50 mA; VCE = 6 V; Tamb = 25 C; f = 1 GHz IC = 50 mA; VCE = 6 V; Tamb = 25 C; f = 2 GHz F Note 1. TS is the temperature at the soldering point of the collector tab. noise figure s = opt; IC = 15 mA; VCE = 8 V; Tamb = 25 C; f = 1 GHz CONDITIONS open emitter - - - - - - - - - MIN. - - - - 0.85 7.5 16 10 1.7 TYP. MAX. 20 10 100 350 - - - - - UNIT V V mA mW pF GHz dB dB dB 1995 Sep 13 2 Philips Semiconductors Product specification NPN 7 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation storage temperature range junction operating temperature open emitter open base open collector DC value, continuous up to Ts = 75 C; note 1 CONDITIONS BFG197; BFG197/X; BFG197/XR MIN. - - - - - -65 - MAX. 20 10 2.5 100 350 +150 175 UNIT V V V mA mW C C THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. TS is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE Cc Ce Cre fT GUM PARAMETER collector leakage current DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency maximum unilateral power gain (note 1) CONDITIONS IE = 0; VCB = 5 V IC = 50 mA; VCE = 5 V IE = ie = 0; VCB = 8 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = ic = 0; VCB = 8 V; f = 1 MHz IC = 50 mA; VCE = 4 V; f = 2 GHz IC = 50 mA; VCE = 6 V; Tamb = 25 C; f = 1 GHz IC = 50 mA; VCE = 6 V; Tamb = 25 C; f = 2 GHz F noise figure s = opt; IC = 15 mA; VCE = 8 V; Tamb = 25 C; f = 1 GHz s = opt; IC = 50 mA; VCE = 6 V; Tamb = 25 C; f = 2 GHz d2 Note second order intermodulation distortion VCE = 6 V;Vo = 50 dBmV; MIN. - 40 - - - - - - - - - TYP. - 110 1.5 3.3 0.85 7.5 16 10 1.7 2.3 -51 MAX. 100 - - - - - - - - - - pF pF pF GHz dB dB dB dB dB UNIT nA PARAMETER from junction to soldering point; note 1 VALUE 290 UNIT K/W s 21 2 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log ------------------------------------------------------------ dB. ( 1 - s 11 2 ) ( 1 - s 22 2 ) 1995 Sep 13 3 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG197; BFG197/X; BFG197/XR MBC983 - 2 MBB267 800 handbook, halfpage Ptot (mW) 600 handbook, halfpage 160 h FE 120 400 80 200 0 0 50 100 150 Ts ( o C) 200 40 0 40 80 I C (mA) 120 VCE = 5 V. Fig.4 Fig.3 Power derating curve. DC current gain as a function of collector current. 1.2 handbook, halfpage C re (pF) 0.8 MCD155 handbook, halfpage 8 MCD156 fT (GHz) 6 4 0.4 2 0 0 0 2 4 6 8 V CB 10 (V) 0 20 40 60 IC (mA) 80 IC = ic = 0; f = 1 MHz. VCE = 4 V; Tamb = 25 C; f = 2 GHz. Fig.5 Feedback capacitance as a function of collector-base voltage. 4 Fig.6 Transition frequency as a function of collector current. 1995 Sep 13 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG197; BFG197/X; BFG197/XR handbook,20 halfpage MCD157 handbook, halfpage 50 MCD158 gain (dB) 15 MSG G max G UM gain (dB) 40 G UM MSG 30 10 20 5 10 G max 0 0 20 40 60 IC (mA) 80 0 10 10 2 103 f (MHz) 10 4 VCE = 4 V; f = 1 GHz. VCE = 4 V; IC = 50 mA. Fig.7 Gain as a function of collector current. Fig.8 Gain as a function of frequency. handbook, halfpage 50 MCD159 handbook, halfpage 50 MCD160 gain (dB) 40 G UM MSG 30 gain (dB) 40 G UM 30 MSG 20 G max 20 G max 10 10 0 10 10 2 103 f (MHz) 10 4 0 10 10 2 103 f (MHz) 10 4 VCE = 6 V; IC = 50 mA. VCE = 8 V; IC = 30 mA. Fig.9 Gain as a function of frequency. Fig.10 Gain as a function of frequency. 1995 Sep 13 5 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG197; BFG197/X; BFG197/XR handbook, halfpage 4 MCD161 handbook, halfpage 4 MCD162 F (dB) 3 f = 2 GHz F (dB) 3 1 GHz 2 500 MHz 20 mA 1 1 10 mA 2 I C = 50 mA 0 1 10 IC (mA) 100 0 10 2 103 f (MHz) 10 4 VCE = 6 V. VCE = 6 V. Fig.11 Minimum noise figure as a function of collector current. Fig.12 Minimum noise figure as a function of frequency. MBB266 MBB268 handbook, halfpage 45 d im handbook, halfpage 35 (dB) 50 d2 (dB) 40 55 45 60 50 65 55 70 20 40 60 80 100 120 I C (mA) 60 20 40 60 80 100 120 I C (mA) VCE = 8 V ; Vo = 700 mV; f(p+q-r) = 793.25 MHz; Tamb = 25 C. VCE = 8 V; Vo = 50 mV; f(p+q-r) = 810 MHz; Tamb = 25 C. Fig.13 Intermodulation distortion, typical values. Fig.14 Second order intermodulation distortion, typical values. 1995 Sep 13 6 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG197; BFG197/X; BFG197/XR 1 handbook, full pagewidth 0.5 MSG 23 dB unstable region 2 4 dB 3 dB 0.2 2 dB + j - j OPT 0 F min 0.2 5 10 * = 1.7 dB 1 2 5 10 0.5 10 5 stability circle 0.2 0.5 1 Zo = 50 . Maximum stable gain = 23 dB. 2 MCD163 Fig.15 Noise circle figure. 1 handbook, full pagewidth 0.5 5 dB 4 dB 0.2 3 dB OPT 0 -j 2 5 10 +j 0.2 * F min = 2.4 dB * 0.5 1 2 5 10 10 5 15 dB G max 15.8 dB 0.2 14 dB 0.5 1 Zo = 50 . 2 MCD164 Fig.16 Noise circle figure. 1995 Sep 13 7 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG197; BFG197/X; BFG197/XR 1 handbook, full pagewidth 0.5 2 0.2 6 dB 5 dB 5 10 +j 0 -j 0.2 4 dB 0.5 1 2 5 10 OPT 10 5 * 8 dB F min = 3.5 dB 0.2 * 9 dB G max 9.7 dB 0.5 1 2 MCD165 Zo = 50 . Fig.17 Noise circle figure. 1 handbook, full pagewidth 0.5 2 3 GHz 0.2 5 10 + j - j 5 40 MHz 0 0.2 0.5 1 2 5 10 10 0.2 0.5 1 VCE = 6 V; IC = 50 mA. 2 MCD166 Fig.18 Common emitter input reflection coefficient (S11). 1995 Sep 13 8 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG197; BFG197/X; BFG197/XR 90 o handbook, full pagewidth 135 o 45 o 40 MHz 180 o 100 80 60 40 20 3 GHz 0o _ 135 o _ 45 o VCE = 6 V; IC = 50 mA. _ 90 o MCD167 Fig.19 Common emitter forward transmission coefficient (S21). 90 o handbook, full pagewidth 135 o 3 GHz 45 o 180 o 0.20 0.16 0.12 0.08 0.04 40 MHz 0o _ 135 o _ 45 o MCD169 VCE = 6 V; IC = 50 mA. _ 90 o Fig.20 Common emitter reverse transmission coefficient (S12). 1995 Sep 13 9 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG197; BFG197/X; BFG197/XR 1 handbook, full pagewidth 0.5 2 0.2 5 10 + j - j 0 0.2 0.5 3 GHz 1 2 5 10 10 5 0.2 40 MHz 2 0.5 1 VCE = 6 V; IC = 50 mA. MCD168 Fig.21 Common emitter output reflection coefficient (S22). 1995 Sep 13 10 Philips Semiconductors Product specification NPN 7 GHz wideband transistor SPICE parameters for BFQ195 crystal SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 (note 1) 20 (note 1) 21 (note 1) 22 23 24 25 26 27 28 29 30 31 32 33 34 35 (note 1) 36 (note 1) 37 (note 1) 38 Note 1. These parameters have not been extracted, the default values are shown. PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS VJS MJS FC VALUE 1.972 150.0 990.8 54.72 30.00 47.82 1.580 165.4 993.9 2.351 9.967 3.510 1.124 5.000 1.000 5.000 368.1 937.2 0.000 1.110 3.000 3.388 600.0 302.9 11.06 30.02 1.649 401.9 0.000 1.190 160.1 89.44 130.0 2.148 0.000 750.0 0.000 785.9 UNIT fA - m V A fA - - m V A aA - A m m - EV - pF mV m ps - V mA deg pF mV m m ns F mV - m handbook, halfpage BFG197; BFG197/X; BFG197/XR C cb L1 B LB B' E' LE C' L2 C C be Cce MBC964 L3 E QLB = 50; QLE = 50. QLB,E (f) = QLB,E (f/Fc). Fc = scaling frequency = 1000 MHz. Fig.22 Package equivalent circuit SOT143; SOT143R. List of components (see Fig.22) DESIGNATION Cbe Ccb Cce L1 L2 L3 LB LE 84 17 191 0.12 0.21 0.06 0.95 0.40 VALUE fF fF fF nH nH nH nH nH UNIT 1995 Sep 13 11 Philips Semiconductors Product specification NPN 7 GHz wideband transistor PACKAGE OUTLINES BFG197; BFG197/X; BFG197/XR handbook, full pagewidth 0.75 0.60 0.150 0.090 4 0.1 max 10 max o 3.0 2.8 1.9 3 B A 0.2 M A B 10 max o 1.4 1.2 2.5 max 1 1.1 max o 2 0.1 M A B 30 max 0.88 0 0.1 1.7 0.48 0 0.1 MBC845 TOP VIEW Dimensions in mm. Fig.23 SOT143. handbook, full pagewidth 0.40 0.25 0.150 0.090 3 0.1 max 10 max o 3.0 2.8 1.9 4 B A 0.2 M A 10 max o 1.4 1.2 2.5 max 2 1.1 max 0.48 0.38 1.7 0.1 M B 1 0.88 0.78 30 max o MBC844 TOP VIEW Dimensions in mm. Fig.24 SOT143R. 1995 Sep 13 12 Philips Semiconductors Product specification NPN 7 GHz wideband transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BFG197; BFG197/X; BFG197/XR This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Sep 13 13 |
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